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| ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC(cont) = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description This NPN transistor has been designed for applications requiring high voltage blocking. The SOT23F package is pin compatible with the industry standard SOT23 foot print but offers lower profile and higher dissipation for applications where power density is of utmost importance. C B Features * * * High voltage Low saturation voltage Low profile small outline package E E C B Pinout - top view Tape width (mm) 8 Quantity per reel 3000 Applications * * Modems Telecoms line switching Ordering information Device ZXTN08400BFFTA Reel size (inches) 7 Device marking 1D5 Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 1 www.zetex.com ZXTN08400BFF Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage (forward blocking) Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Peak pulse current Base current Power dissipation at Tamb =25C(a) Linear derating factor Power dissipation at Tamb =25C(b) Linear derating factor Power dissipation at Tamb =25C(c) Linear derating factor Power dissipation at Tamb Linear derating factor Operating and storage temperature range Tj, Tstg =25C(d) PD PD PD Symbol VCBO VCEX VCEO VECO VEBO IC ICM IB PD Limit 450 450 400 6 7 0.5 1 0.2 0.84 6.72 1.34 10.72 1.5 12.0 2.0 16.0 - 55 to 150 Unit V V V V V A A A W mW/C W mW/C W mW/C W mW/C C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Limit 149 93 83 60 Unit C/W C/W C/W C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs. Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 2 www.zetex.com ZXTN08400BFF Typical characteristics Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 3 www.zetex.com ZXTN08400BFF Electrical characteristics (at Tamb = 25C unless otherwise stated) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (forward blocking) Collector-emitter breakdown voltage (base open) Emitter-collector breakdown voltage (reverse blocking) Emitter-collector breakdown voltage (base open) Emitter-base breakdown voltage Collector-base cut-off current Collector-emitter cut-off current Emitter-base cut-off current Collector-emitter saturation voltage Symbol BVCBO BVCEX BVCEO BVECX BVECO BVEBO ICBO ICEX IEBO VCE(sat) Min. 450 450 400 6 6 7 Typ. 550 550 500 8.0 8.5 8.1 <1 <1 <1 70 50 120 125 Base-emitter saturation voltage VBE(sat) Base-emitter turn-on voltage VBE(on) 90 100 10 Transition frequency Output capacitance Delay time Rise time Storage time Fall time fT COBO td tr ts tf 865 800 165 180 20 40 8 100 52 3122 240 300 s; duty cycle 2%. Max. Unit Conditions V V V V V V 50 20 100 50 85 70 170 175 950 900 nA A nA nA mV mV mV mV mV mV IC = 100 A IC = 100 A, RBE < 1k -1V < VBE < 0.25V IC = 10mA(*) IE = 100 A, RBC < 1k or 0.25V > VBC > -0.25V IE = 100 A, IE = 100 A VCB = 360V VCB = 360V, Tamb= 100C VCE = 360V, RBE < 1k -1V < VBE < 0.25V VEB = 5.6V IC = 20mA, IB = 1mA (*) IC = 50mA, IB = 5mA(*) IC = 300mA, IB = 30mA(*) IC = 500mA, IB = 100mA(*) IC = 500mA, IB = 100mA(*) IC = 500mA, VCE = 10V(*) IC = 1mA, VCE = 5V(*) 300 IC = 50mA, VCE = 5V(*) IC = 500mA, VCE = 10V(*) MHz IC = 10mA, VCE = 20V f = 20MHz 10 pF ns ns ns ns VCB = 20V, f = 1MHz(*) VCC = 100V. IC = 100mA, IB1 = 10mA, IB2= 20mA. or or Static forward current transfer hFE ratio NOTES: (*) Measured under pulsed conditions. Pulse width Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 4 www.zetex.com ZXTN08400BFF Typical characteristics Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 5 www.zetex.com ZXTN08400BFF Package outline - SOT23F D b b L1 L c e1 e E1 E E2 b R A A1 Dim. A A1 b c D e e1 Millimeters Min. 0.80 0.00 0.35 0.10 2.80 1.80 Max. 1.00 0.10 0.45 0.20 3.00 2.00 Inches Min. 0.0315 0.00 0.0153 0.0043 0.1102 0.0709 Max. 0.0394 0.0043 0.0161 0.0079 0.1181 0.0787 Dim. E E1 E2 L L1 R O Millimeters Min. 2.30 1.50 1.10 0.48 0.30 0.05 0 Max. 2.50 1.70 1.26 0.68 0.50 0.15 12 Inches Max. 0.0906 0.0590 0.0433 0.0189 0.0153 0.0019 0 Max. 0.0984 0.0669 0.0496 0.0268 0.0161 0.0059 12 0.95 ref 0.0374 ref Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Issue 1 - September 2006 (c) Zetex Semiconductors plc 2006 6 www.zetex.com |
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